Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 73
... porosity . The data for samples containing < 30 % of any of the polymers , 1a - le , fall on or above this ideal ... Porosity 50 6 - Arm DP5.8 60 40 30 898 60 50 6 - Arm DP9.5 2888 % Porosity 40 30 20 10 10 0 0 0 10 20 30 40 50 60 0 10 ...
... porosity . The data for samples containing < 30 % of any of the polymers , 1a - le , fall on or above this ideal ... Porosity 50 6 - Arm DP5.8 60 40 30 898 60 50 6 - Arm DP9.5 2888 % Porosity 40 30 20 10 10 0 0 0 10 20 30 40 50 60 0 10 ...
Page 99
... porosity were fabricated using an ambient pressure technique . The same porosity can be obtained with different microstructures by varying the aging time of the films . The dielectric constant of these films as a function of porosity at ...
... porosity were fabricated using an ambient pressure technique . The same porosity can be obtained with different microstructures by varying the aging time of the films . The dielectric constant of these films as a function of porosity at ...
Page 101
... porosity of 70 % . 0.5 μm thick copper films were evaporated directly onto the films in an e - beam evaporator . The samples were annealed in a nitrogen environment . The properties of the films and the annealing conditions are ...
... porosity of 70 % . 0.5 μm thick copper films were evaporated directly onto the films in an e - beam evaporator . The samples were annealed in a nitrogen environment . The properties of the films and the annealing conditions are ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films