Materials Research Society Symposia Proceedings, Volume 511 |
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Page 76
concentration with pulse off time for films deposited from hexafluoropropylene
oxide (HFPO) Pulsed plasma excitation has been reported to dramatically
change the nature of the deposited fluorocarbon film.3-4-15 The composition of
films from ...
concentration with pulse off time for films deposited from hexafluoropropylene
oxide (HFPO) Pulsed plasma excitation has been reported to dramatically
change the nature of the deposited fluorocarbon film.3-4-15 The composition of
films from ...
Page 78
Finally, the deposition rates are also influenced by the ease of forming the
depositing precursors during the pulse on time. The relative levels of the
deposition rates may simply be due to the fact that it is easier for the plasma to
dissociate ...
Finally, the deposition rates are also influenced by the ease of forming the
depositing precursors during the pulse on time. The relative levels of the
deposition rates may simply be due to the fact that it is easier for the plasma to
dissociate ...
Page 79
Deposition rate per pulse cycle versus pulse on time for a constant pulse off time
of 400 ms. (a) HFPO and CHC1F2 show a strict linear increase (r2 > 0.99). (b)
C2H2F4 and CH2F2 show nonlinear increases, indicating a more complex ...
Deposition rate per pulse cycle versus pulse on time for a constant pulse off time
of 400 ms. (a) HFPO and CHC1F2 show a strict linear increase (r2 > 0.99). (b)
C2H2F4 and CH2F2 show nonlinear increases, indicating a more complex ...
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Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
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1998 Materials Research a-C:F films a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition coefficient concentration copper curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate F1AC film thickness fluorine fluorocarbon FTIR function hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k lower Materials Research Society measured mechanical metal lines Microelectronics modulus moisture molecular nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silicon oxide silsesquioxane spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel