Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 81
... ratio . This assumption agrees with the observation that CH2F2 films have the lowest CF3 concentrations of the three films . The role of the F : H ratio is also apparent from looking at the CH , stretch region of the FTIR spectra of the ...
... ratio . This assumption agrees with the observation that CH2F2 films have the lowest CF3 concentrations of the three films . The role of the F : H ratio is also apparent from looking at the CH , stretch region of the FTIR spectra of the ...
Page 158
... ratios : where the returned energy ratio is defined as the ratio of the elastic to total work done . In the indentation process , typically for lower curing temperatures at maximum indentation forces of .2 mN , this ratio is around .9 , and ...
... ratios : where the returned energy ratio is defined as the ratio of the elastic to total work done . In the indentation process , typically for lower curing temperatures at maximum indentation forces of .2 mN , this ratio is around .9 , and ...
Page 291
... ratio requires a higher gap - filling capability in the metal deposition process . The aspect ratio for the metal gap filling of quarter - micron devices is about 2-3 at a line width and space of 0.3 μm / 0.3μm . Therefore , both ...
... ratio requires a higher gap - filling capability in the metal deposition process . The aspect ratio for the metal gap filling of quarter - micron devices is about 2-3 at a line width and space of 0.3 μm / 0.3μm . Therefore , both ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films