Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 76
... reactor effluents confirms the formation of CFOCF3 in the pulsed plasma . 19 20,21 More detailed bond connectivities in these plasma film networks have been probed using solid - state nuclear magnetic resonance ( NMR ) spectroscopy.20 ...
... reactor effluents confirms the formation of CFOCF3 in the pulsed plasma . 19 20,21 More detailed bond connectivities in these plasma film networks have been probed using solid - state nuclear magnetic resonance ( NMR ) spectroscopy.20 ...
Page 94
... reactor ( 30 cm × 10.5 cm ) via two external concentric electrodes , thus eliminating metal contamination of the polymer films from the electrodes . Substrates ( Si , KBr or Cu ) were located in the center of the reactor , equidistant ...
... reactor ( 30 cm × 10.5 cm ) via two external concentric electrodes , thus eliminating metal contamination of the polymer films from the electrodes . Substrates ( Si , KBr or Cu ) were located in the center of the reactor , equidistant ...
Page 260
... reactor platforms , PECVD and HDP , were used to generate the FLAC , a - C : H , and a- Table 1 : Film process conditions . Process Chemistry Press . , Temp . , 13.56 MHz 350 kHz mTorr ° C rf , Watts rf , Watts SiC : H materials . Films ...
... reactor platforms , PECVD and HDP , were used to generate the FLAC , a - C : H , and a- Table 1 : Film process conditions . Process Chemistry Press . , Temp . , 13.56 MHz 350 kHz mTorr ° C rf , Watts rf , Watts SiC : H materials . Films ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films