Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 3
Both interconnect resistance and capacitance play key roles in overall
performance , but modeling simulations have highlighted the importance of
reducing parasitic capacitance to manage crosstalk , power dissipation and RC
delay .
Both interconnect resistance and capacitance play key roles in overall
performance , but modeling simulations have highlighted the importance of
reducing parasitic capacitance to manage crosstalk , power dissipation and RC
delay .
Page 68
Etching can cause the retained doses reduced and saturate during PII process (
10 ) , which in turn results the saturation of film improvement . Etching consumes
fluorine and changes fluorine content in the films . A higher etching rate was ...
Etching can cause the retained doses reduced and saturate during PII process (
10 ) , which in turn results the saturation of film improvement . Etching consumes
fluorine and changes fluorine content in the films . A higher etching rate was ...
Page 168
This is a singlet mode , so we don ' t expect some changes in this mode even if
the symmetry of BMT reduces down to the ... These vibrations belonging to the
same irreducible representation are coupled , so that the reduced mass of these
...
This is a singlet mode , so we don ' t expect some changes in this mode even if
the symmetry of BMT reduces down to the ... These vibrations belonging to the
same irreducible representation are coupled , so that the reduced mass of these
...
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Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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Common terms and phrases
adhesion annealing applications atoms bonds calculated capacitance carbon cause characteristics chemical compared concentration copper crack curing decrease density dependence deposition depth determined developed devices dielectric constant diffusion e-beam effect electrical electron energy etch Figure fluorine frequency function glass heating higher hydrogen increase indicate integration interconnect interface layer less lines load low-k lower materials measured mechanical metal moisture observed obtained organic oxide oxygen peak performance plasma polished polyimide polymer polymerization porosity porous precursors present Proc properties pulse range ratio reaction reduced relative removal Research resistance samples shown in Figure shows silica silicon SiO2 spectra stability strength stress structure substrate surface Symp Table technique temperature thermal thickness thin films treatment values Volume wafer wiring xerogel
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1998 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558994173, 9781558994171 |
| Export Citation | BiBTeX EndNote RefMan |