Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 3
... reduced gate length , scaled interconnects suffer from increased RC delay and tend to dominate overall performance as shown in Figure 1 [ 1 ] . The performance degradation is due to higher resistance ( R ) of narrower metal leads and ...
... reduced gate length , scaled interconnects suffer from increased RC delay and tend to dominate overall performance as shown in Figure 1 [ 1 ] . The performance degradation is due to higher resistance ( R ) of narrower metal leads and ...
Page 68
... reduction of the dielectric constant . With an optimal PII process condition : 0.2 mTorr pressure , -2 kV pulse potential , 2 μsec pulse width , and 10 kHz pulse repetition frequency , the dielectric constant was significantly reduced ...
... reduction of the dielectric constant . With an optimal PII process condition : 0.2 mTorr pressure , -2 kV pulse potential , 2 μsec pulse width , and 10 kHz pulse repetition frequency , the dielectric constant was significantly reduced ...
Page 168
... reduced mass . It was found that there is a linear relation between the vibrational frequencies and the inverse square root of the reduced mass for F2g modes in a series of the 1 : 1 B - site compounds PST [ 6,7,14 ] → BYT [ 8 ] → SAT ...
... reduced mass . It was found that there is a linear relation between the vibrational frequencies and the inverse square root of the reduced mass for F2g modes in a series of the 1 : 1 B - site compounds PST [ 6,7,14 ] → BYT [ 8 ] → SAT ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films