Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 35
... relative dielectric constants of the SSQ SOG materials are highlighted to indicate that are indeed " low - k " materials relative to the more conventionally - used chemically vapor deposited SiO2 . It is also apparent that the SOG ...
... relative dielectric constants of the SSQ SOG materials are highlighted to indicate that are indeed " low - k " materials relative to the more conventionally - used chemically vapor deposited SiO2 . It is also apparent that the SOG ...
Page 300
... relative Auger intensity , as shown in figure 3. The relative Cu intensity remains unchanged until ~ 300 K. Between 300 K and 600 K , the relative Cu intensity decreases by about 25 % . Above 600 K , the relative Cu signal decreases ...
... relative Auger intensity , as shown in figure 3. The relative Cu intensity remains unchanged until ~ 300 K. Between 300 K and 600 K , the relative Cu intensity decreases by about 25 % . Above 600 K , the relative Cu signal decreases ...
Page 361
... ( relative change of the physical dimension ) . The humidity - induced strain is typi- cally in the same range as the temperature - induced strain . As a result of the spin - coat and anneal processes , the mechanical properties of the ...
... ( relative change of the physical dimension ) . The humidity - induced strain is typi- cally in the same range as the temperature - induced strain . As a result of the spin - coat and anneal processes , the mechanical properties of the ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films