Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 273
... removal of carbon has left the fluorine free to bond with the copper . Finally , in panel ( c ) , the surface has ... removing the dielectric in an HF dip after the oxygen plasma treatment . We are currently characterizing these residues ...
... removal of carbon has left the fluorine free to bond with the copper . Finally , in panel ( c ) , the surface has ... removing the dielectric in an HF dip after the oxygen plasma treatment . We are currently characterizing these residues ...
Page 274
... removed , a further increase in refractive index occurs . Surface analysis results are consistent with this change owing to removal of hydrogen from the film . Also , sputtering the modified surface while tracking the results with ...
... removed , a further increase in refractive index occurs . Surface analysis results are consistent with this change owing to removal of hydrogen from the film . Also , sputtering the modified surface while tracking the results with ...
Page 282
... removal rate is a function of 8 , abrasive area coverage , and velocity with which they move along the surface and ( b ) E in Eq . ( 1 ) now represents the Young's modules of the At - layer , not the original surface . There are two ...
... removal rate is a function of 8 , abrasive area coverage , and velocity with which they move along the surface and ( b ) E in Eq . ( 1 ) now represents the Young's modules of the At - layer , not the original surface . There are two ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films