Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 99
... reported [ 8,9 ] . There have been numerous studies on the effect of aging on bulk silica gels [ 1 ] . Yamane and Okano [ 15 ] found that the porosity and the average pore size of bulk gels increased rapidly as the aging temperature was ...
... reported [ 8,9 ] . There have been numerous studies on the effect of aging on bulk silica gels [ 1 ] . Yamane and Okano [ 15 ] found that the porosity and the average pore size of bulk gels increased rapidly as the aging temperature was ...
Page 141
... reported dielectric constant is the out - of - plane one which is much lower for both VT - 4 and AF - 4 of 2.17 and 2.14 . Since these values were calculated from Maxwell's equation , k = n2 , the actual dielectric constant might be ...
... reported dielectric constant is the out - of - plane one which is much lower for both VT - 4 and AF - 4 of 2.17 and 2.14 . Since these values were calculated from Maxwell's equation , k = n2 , the actual dielectric constant might be ...
Page 188
... reported in - plane modulus further validates this assumption . The through - plane CTE for BCB measured using this approach was previously reported by Hodge13 . He reported an effective through - plane expansion of between 107-118 ppm ...
... reported in - plane modulus further validates this assumption . The through - plane CTE for BCB measured using this approach was previously reported by Hodge13 . He reported an effective through - plane expansion of between 107-118 ppm ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines Microelectronics modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films