Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 311
... resistance change when the void grows in the reservoir section and causes a sharp resistance increase when the void region has grown into the line section . Some typical resistance changes ( AR = R ( t ) - Ro ) of two - level Cu / PI ...
... resistance change when the void grows in the reservoir section and causes a sharp resistance increase when the void region has grown into the line section . Some typical resistance changes ( AR = R ( t ) - Ro ) of two - level Cu / PI ...
Page 356
... resistance as a function of current for TEOS and PAE passivation . ΔΤ ( ° C ) 7.3 at 4E6 A / cm2 34.8 1.3 1.35 1.30- Normalized resistance 1.2 1.1 Normalized resistance 1.25 - 1.20 1.15 1.10 1.05- 1.00 1.0 0.95 0 200 400 600 800 1000 ...
... resistance as a function of current for TEOS and PAE passivation . ΔΤ ( ° C ) 7.3 at 4E6 A / cm2 34.8 1.3 1.35 1.30- Normalized resistance 1.2 1.1 Normalized resistance 1.25 - 1.20 1.15 1.10 1.05- 1.00 1.0 0.95 0 200 400 600 800 1000 ...
Page 357
... resistance spikes because of localized necking of the Al ( Cu ) lines . These sidewall voids are also believed to undergo healing which would account for the resistance to return to a nominal value . After extensive EM stressing , PAE ...
... resistance spikes because of localized necking of the Al ( Cu ) lines . These sidewall voids are also believed to undergo healing which would account for the resistance to return to a nominal value . After extensive EM stressing , PAE ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films