Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 31
... respectively . The full - width at the half - maximum was 2.25eV for all the components , the same as that of the pure silica film shown in ( b ) . The peak energy for the dominant component was 0.7eV lower than that ( = 103.5eV ) of Si ...
... respectively . The full - width at the half - maximum was 2.25eV for all the components , the same as that of the pure silica film shown in ( b ) . The peak energy for the dominant component was 0.7eV lower than that ( = 103.5eV ) of Si ...
Page 41
... respectively . Previously published ab initio quantum chemistry 10 and laboratory IR spectra11 for T8 serve to check the accuracy of the present calculations . We find measured frequencies to be within 3 % of our calculated values ...
... respectively . Previously published ab initio quantum chemistry 10 and laboratory IR spectra11 for T8 serve to check the accuracy of the present calculations . We find measured frequencies to be within 3 % of our calculated values ...
Page 310
... respectively , and w and h are the width and thickness of the line , respectively . The lifetime of interconnects , t , is defined as the amount of time taken for a void to grow to critical size , ALc , and can be approximately written ...
... respectively , and w and h are the width and thickness of the line , respectively . The lifetime of interconnects , t , is defined as the amount of time taken for a void to grow to critical size , ALc , and can be approximately written ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films