Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 64
... RF power into the chamber , and a wafer holder connected to a high voltage pulse generator . A flat pancake - type coil is placed outside the chamber on top of a 3/4 inch thick , 9 inch diameter quartz window . ICP source has many ...
... RF power into the chamber , and a wafer holder connected to a high voltage pulse generator . A flat pancake - type coil is placed outside the chamber on top of a 3/4 inch thick , 9 inch diameter quartz window . ICP source has many ...
Page 65
... RF power : 700 W 1.1 1.0 h : 20 cm 1.0 0.9 0.9 DIELECTRIC CONSTANT ε , 4.0 4.0 3.8 3.8 3.6 3.6 CF , PII 0.2 mTorr 3.4 3.4 0.5 mTorr 0.7 mTorr 3.2 3.2 1 2 3 4 5 0 1 2 3 4 PRESSURE ( mTorr ) Fig . 1 Ion density vs. working pressure , RF ...
... RF power : 700 W 1.1 1.0 h : 20 cm 1.0 0.9 0.9 DIELECTRIC CONSTANT ε , 4.0 4.0 3.8 3.8 3.6 3.6 CF , PII 0.2 mTorr 3.4 3.4 0.5 mTorr 0.7 mTorr 3.2 3.2 1 2 3 4 5 0 1 2 3 4 PRESSURE ( mTorr ) Fig . 1 Ion density vs. working pressure , RF ...
Page 66
... RF power : 700 W , 1.25x101 / cm3 , pulse : -2 kV , tp 2 μsec , prf 10 kHz , annealing : 20 min in N2 at 385 ° C ) Table I. Major properties of SiO2 films before and after PII . ( Pressure : 0.2 mTorr , ICP RF power : 700 W , Pulse : -2 ...
... RF power : 700 W , 1.25x101 / cm3 , pulse : -2 kV , tp 2 μsec , prf 10 kHz , annealing : 20 min in N2 at 385 ° C ) Table I. Major properties of SiO2 films before and after PII . ( Pressure : 0.2 mTorr , ICP RF power : 700 W , Pulse : -2 ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films