Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
From inside the book
Results 1-3 of 87
Page 87
... sample systems . EXPERIMENTAL Material Polyimides used in this study were PEI ( Mw = 45000 , Mw / M - 2 ) and PAI ( Mw = 65400 , Mw / Mn = 1.3 ) obtained from Aldrich Chemical Co. PS samples were obtained from Aldrich Chemical Co. , and ...
... sample systems . EXPERIMENTAL Material Polyimides used in this study were PEI ( Mw = 45000 , Mw / M - 2 ) and PAI ( Mw = 65400 , Mw / Mn = 1.3 ) obtained from Aldrich Chemical Co. PS samples were obtained from Aldrich Chemical Co. , and ...
Page 298
... samples consisted of polycrystalline foils ~ 1 cm2 in area and < 0.1 mm thick , and were attached to two Ta leads with a Ta sample holder . The thermocouple junction was spotwelded between the sample backside and the sample holder . Cu ...
... samples consisted of polycrystalline foils ~ 1 cm2 in area and < 0.1 mm thick , and were attached to two Ta leads with a Ta sample holder . The thermocouple junction was spotwelded between the sample backside and the sample holder . Cu ...
Page 300
... sample temperature for VTMS - derived film on Al substrate , followed by evaporative deposition of Cu at 90 K sample temperature : Above 700 K , Al is observed to diffuse through the sample , rather than Cu diffusion through the ...
... sample temperature for VTMS - derived film on Al substrate , followed by evaporative deposition of Cu at 90 K sample temperature : Above 700 K , Al is observed to diffuse through the sample , rather than Cu diffusion through the ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
41 other sections not shown
Other editions - View all
Common terms and phrases
1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films