Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 41
... Samples were connected via an HP 16048A test lead . Silsesquioxane samples for dielectric study were spin - coated as thin films on a glass substrate with patterned ( bottom ) Al electrodes and the patterned top Al electrodes were ...
... Samples were connected via an HP 16048A test lead . Silsesquioxane samples for dielectric study were spin - coated as thin films on a glass substrate with patterned ( bottom ) Al electrodes and the patterned top Al electrodes were ...
Page 87
... sample was also supplied by Aldrich Chemical Co. , and its molecular weight was 900000 ( Mw / Mn = 1.4 ) . All polymer samples used here are fairly monodisperse . Sample Preparation The solvent casting method was used to prepare ...
... sample was also supplied by Aldrich Chemical Co. , and its molecular weight was 900000 ( Mw / Mn = 1.4 ) . All polymer samples used here are fairly monodisperse . Sample Preparation The solvent casting method was used to prepare ...
Page 166
... samples showed a strong B - site ordering and was indexed as a hexagonal perovskite structure [ 3 ] with a = 5.7731 Å and c = 7.0941 Å . The ceramic samples of SAT and SAN were found to be highly ordered , having Fm3m space group ...
... samples showed a strong B - site ordering and was indexed as a hexagonal perovskite structure [ 3 ] with a = 5.7731 Å and c = 7.0941 Å . The ceramic samples of SAT and SAN were found to be highly ordered , having Fm3m space group ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films