Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 135
... SCCM Ar , 10 SCCM CF4 , 90 SCCM 02 for 5 seconds . The SiO2 - BCB samples are capped with 1000 Å of PE - CVD oxide deposited from a mixture of N2O and SiH4 gases . Aluminum / Metal Liner Deposition A PVD titanium nitride barrier layer ...
... SCCM Ar , 10 SCCM CF4 , 90 SCCM 02 for 5 seconds . The SiO2 - BCB samples are capped with 1000 Å of PE - CVD oxide deposited from a mixture of N2O and SiH4 gases . Aluminum / Metal Liner Deposition A PVD titanium nitride barrier layer ...
Page 136
sputtering . An argon flow of 40 sccm combined with 65 sccm N2 gas to the plasma ( 16.3 kW ) is utilized for titanium nitride . CVD aluminum was deposited in a modified LAM QUAD cluster tool ( hot wall ) . For Al CVD the source ...
sputtering . An argon flow of 40 sccm combined with 65 sccm N2 gas to the plasma ( 16.3 kW ) is utilized for titanium nitride . CVD aluminum was deposited in a modified LAM QUAD cluster tool ( hot wall ) . For Al CVD the source ...
Page 192
... sccm . The susceptor temperature was set to 390 ° C , deposition pressure to 3 torr , and rf power to 250 W. The ... ( sccm ) Flow Rate ( sccm ) Figure 1. Deposition Rate vs. F gas flow rate Figure 2. Refractive Index vs. F gas flow rate ...
... sccm . The susceptor temperature was set to 390 ° C , deposition pressure to 3 torr , and rf power to 250 W. The ... ( sccm ) Flow Rate ( sccm ) Figure 1. Deposition Rate vs. F gas flow rate Figure 2. Refractive Index vs. F gas flow rate ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films