Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
From inside the book
Results 1-3 of 76
Page 95
... shown are in accord with previous studies of fluorocarbon monomers [ 6 ] ... ( Figure 1b ) . The 1509 cm ' peak is attributed to fluoroaromatic ring carbon ... shown in Figure 2 , illustrating the variation in film compositions with changes ...
... shown are in accord with previous studies of fluorocarbon monomers [ 6 ] ... ( Figure 1b ) . The 1509 cm ' peak is attributed to fluoroaromatic ring carbon ... shown in Figure 2 , illustrating the variation in film compositions with changes ...
Page 97
... shown in Figure 5 , in which TGA analysis of an as deposited and an film cured at 400 ° C under N2 are shown . These PAB films were polymerized at plasma duty cycle of 1 / 10ms and 50 W peak power . Weight ( % ) 100 80 ( a ) ( b ) ...
... shown in Figure 5 , in which TGA analysis of an as deposited and an film cured at 400 ° C under N2 are shown . These PAB films were polymerized at plasma duty cycle of 1 / 10ms and 50 W peak power . Weight ( % ) 100 80 ( a ) ( b ) ...
Page 186
... Figure 3. The permittivity increases linearly ( R2 greater than 0.98 ) for compressive stresses greater than 2.5 MPa , with a slope of 0.51 ± 0.06 GPa averaged over two samples . The data shown in Figure 3 was obtained from one of the ...
... Figure 3. The permittivity increases linearly ( R2 greater than 0.98 ) for compressive stresses greater than 2.5 MPa , with a slope of 0.51 ± 0.06 GPa averaged over two samples . The data shown in Figure 3 was obtained from one of the ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
41 other sections not shown
Other editions - View all
Common terms and phrases
1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films