Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 65
... shows the etching observed in CF2 PII doping experiment . The etching rate was 283 A / min . The films processed at ... shows the evolution of the effective dielectric constant of SiO ( F , C ) films versus PII process time for the ...
... shows the etching observed in CF2 PII doping experiment . The etching rate was 283 A / min . The films processed at ... shows the evolution of the effective dielectric constant of SiO ( F , C ) films versus PII process time for the ...
Page 249
... shows that refractive indices are not changed after the etching in a pure oxygen and O2 / NF , plasmas . The refractive indices of the polymers decrease during the interaction of the polymers with fluorine ( Fig.2 ) . This effect ...
... shows that refractive indices are not changed after the etching in a pure oxygen and O2 / NF , plasmas . The refractive indices of the polymers decrease during the interaction of the polymers with fluorine ( Fig.2 ) . This effect ...
Page 293
... show degradation of the barrier structure of between Cu and amorphous carbon without fluorine after annealing at 500 ° C [ 14 ] . Figure 4 shows the reflection of a - C : F formed on Cu using a lamp with a wave length of 190-300 nm ...
... show degradation of the barrier structure of between Cu and amorphous carbon without fluorine after annealing at 500 ° C [ 14 ] . Figure 4 shows the reflection of a - C : F formed on Cu using a lamp with a wave length of 190-300 nm ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films