Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 65
Table I also shows the etching observed in CF2 PII doping experiment . The
etching rate was 283 Å / min . The films processed at 0 . 5 mTorr and 0 . 7 mTorr
demonstrated similar properties as that at 0 . 2 mTorr . The etching rates for 0 .
Table I also shows the etching observed in CF2 PII doping experiment . The
etching rate was 283 Å / min . The films processed at 0 . 5 mTorr and 0 . 7 mTorr
demonstrated similar properties as that at 0 . 2 mTorr . The etching rates for 0 .
Page 249
Ellipsometric characterisation of the films shows that refractive indices are not
changed after the etching in a pure oxygen and 0 , / NF , plasmas . The refractive
indices of the polymers decrease during the interaction of the polymers with ...
Ellipsometric characterisation of the films shows that refractive indices are not
changed after the etching in a pure oxygen and 0 , / NF , plasmas . The refractive
indices of the polymers decrease during the interaction of the polymers with ...
Page 293
Conventional aluminum wiring technology uses titanium nitride as an anti -
reflection layer for aluminum . Thus , a polished Cu surface requires the reduction
of the Cu reflection . Figure 2 shows the TEM view of the metal layer on a - C : F
after ...
Conventional aluminum wiring technology uses titanium nitride as an anti -
reflection layer for aluminum . Thus , a polished Cu surface requires the reduction
of the Cu reflection . Figure 2 shows the TEM view of the metal layer on a - C : F
after ...
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Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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Common terms and phrases
adhesion annealing applications atoms bonds calculated capacitance carbon cause characteristics chemical compared concentration copper crack curing decrease density dependence deposition depth determined developed devices dielectric constant diffusion e-beam effect electrical electron energy etch Figure fluorine frequency function glass heating higher hydrogen increase indicate integration interconnect interface layer less lines load low-k lower materials measured mechanical metal moisture observed obtained organic oxide oxygen peak performance plasma polished polyimide polymer polymerization porosity porous precursors present Proc properties pulse range ratio reaction reduced relative removal Research resistance samples shown in Figure shows silica silicon SiO2 spectra stability strength stress structure substrate surface Symp Table technique temperature thermal thickness thin films treatment values Volume wafer wiring xerogel
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1998 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558994173, 9781558994171 |
| Export Citation | BiBTeX EndNote RefMan |