Materials Research Society Symposia Proceedings, Volume 511 |
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Page 105
NANOPOROUS SILICA FOR LOW K DIELECTRICS T. Ramos, K. Rhoderick, R.
Roth, L. Brungardt, S. Wallace, J. Drage, J. Dunne, D. Endisch, R. Katsanes, N.
Viernes, and D.M. Smith Nanoglass LLC, 1349 Moffett Park Drive., Sunnyvale,
CA ...
NANOPOROUS SILICA FOR LOW K DIELECTRICS T. Ramos, K. Rhoderick, R.
Roth, L. Brungardt, S. Wallace, J. Drage, J. Dunne, D. Endisch, R. Katsanes, N.
Viernes, and D.M. Smith Nanoglass LLC, 1349 Moffett Park Drive., Sunnyvale,
CA ...
Page 116
REFERENCES 1 - The National Technology Roadmap for Semiconductors,
Semiconductor Industry Association, 1997 2 - RD. Shoup, "Controlled Pore Silica
Bodies Gelled from Silica Sol-Alkali Silicate Mixtures", Colloid and Interface
Science, ...
REFERENCES 1 - The National Technology Roadmap for Semiconductors,
Semiconductor Industry Association, 1997 2 - RD. Shoup, "Controlled Pore Silica
Bodies Gelled from Silica Sol-Alkali Silicate Mixtures", Colloid and Interface
Science, ...
Page 216
A FTIR spectrum of a surface modified porous silica xerogel film, Figure 3b,
shows the absence of adsorbed water peaks, suggesting the film is hydrophobic.
Hydrophobicity is also confirmed by water contact angle measurements. Porous ...
A FTIR spectrum of a surface modified porous silica xerogel film, Figure 3b,
shows the absence of adsorbed water peaks, suggesting the film is hydrophobic.
Hydrophobicity is also confirmed by water contact angle measurements. Porous ...
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Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
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1998 Materials Research a-C:F films a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition coefficient concentration copper curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate F1AC film thickness fluorine fluorocarbon FTIR function hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k lower Materials Research Society measured mechanical metal lines Microelectronics modulus moisture molecular nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silicon oxide silsesquioxane spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel