Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 191
... silicon oxide films were prepared in a plasma enhanced chemical vapor deposition reactor using TEOS , O2 , and either C2F6 or NF3 . Properties such as deposition rate , film refractive index , dielectric constant , density , and ...
... silicon oxide films were prepared in a plasma enhanced chemical vapor deposition reactor using TEOS , O2 , and either C2F6 or NF3 . Properties such as deposition rate , film refractive index , dielectric constant , density , and ...
Page 224
... silicon oxide and silicon nitride films that have been historically used in interconnect structures are hard , compressively stressed layers that are deposited at temperatures in the 300-400C range . These films have moduli greater than ...
... silicon oxide and silicon nitride films that have been historically used in interconnect structures are hard , compressively stressed layers that are deposited at temperatures in the 300-400C range . These films have moduli greater than ...
Page 293
... silicon oxide films . With conventional ILD , CMP was required after metal patterning . Therefore , the thickness of silicon oxide on a - C : F was related to via depth , which affects via formation technology . Makers of LSI devices ...
... silicon oxide films . With conventional ILD , CMP was required after metal patterning . Therefore , the thickness of silicon oxide on a - C : F was related to via depth , which affects via formation technology . Makers of LSI devices ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films