Materials Research Society Symposia Proceedings, Volume 511 |
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Page 191
CHARACTERIZATON OF PECVD FLUORINATED SILICON OXIDES AND
STABILIZATION OF INTERACTION WITH METALS Sarah E. Kim and Christoph
Steinbruchel, Rensselaer Polytechnic Institute, Department of Materials
Engineering ...
CHARACTERIZATON OF PECVD FLUORINATED SILICON OXIDES AND
STABILIZATION OF INTERACTION WITH METALS Sarah E. Kim and Christoph
Steinbruchel, Rensselaer Polytechnic Institute, Department of Materials
Engineering ...
Page 224
Physical and mechanical properties of DLC The mechanical properties and
stress states of typical interlevel dielectric materials are shown in Table I. The
standard PECVD silicon oxide and silicon nitride films that have been historically
used in ...
Physical and mechanical properties of DLC The mechanical properties and
stress states of typical interlevel dielectric materials are shown in Table I. The
standard PECVD silicon oxide and silicon nitride films that have been historically
used in ...
Page 293
The capping structure is an advantage in protecting from oxidation, while the
capping structure requires higher thermal ... Therefore, the silicon oxide formation
process was less oxidized at the surface of the Cu even with the oxygen plasma ...
The capping structure is an advantage in protecting from oxidation, while the
capping structure requires higher thermal ... Therefore, the silicon oxide formation
process was less oxidized at the surface of the Cu even with the oxygen plasma ...
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Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
42 other sections not shown
Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1998 Materials Research a-C:F films a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition coefficient concentration copper curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate F1AC film thickness fluorine fluorocarbon FTIR function hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k lower Materials Research Society measured mechanical metal lines Microelectronics modulus moisture molecular nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silicon oxide silsesquioxane spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel
Bibliographic information
| Title | Materials Research Society Symposia Proceedings, Volume 511 Materials Research Society Symposia Proceedings, Materials Research Society Symposia Proceedings |
| Author | Chien Chiang |
| Contributor | Materials Research Society |
| Publisher | North Holland, 1998 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| Export Citation | BiBTeX EndNote RefMan |