Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 33
... siloxane ( -Si - O - Si- ) backbone similar to that of SiO2 but with a large proportion ( > 25 % ) of non - bridging Si - R bonds . A consequence of the non - bridging bonds and excess volume arising from constrained polymerization is ...
... siloxane ( -Si - O - Si- ) backbone similar to that of SiO2 but with a large proportion ( > 25 % ) of non - bridging Si - R bonds . A consequence of the non - bridging bonds and excess volume arising from constrained polymerization is ...
Page 52
... siloxane polymer after a full e - beam cure , variable energy e - beam cure , and depth - controlled e - beam cure . The full e - beam curing process results in a constant wet etching rate throughout the entire thickness of the film ...
... siloxane polymer after a full e - beam cure , variable energy e - beam cure , and depth - controlled e - beam cure . The full e - beam curing process results in a constant wet etching rate throughout the entire thickness of the film ...
Page 279
... Siloxane 2010M -100 1.3 low bis Benzocyclobutene 32 52 2.0 0.26b SiO2 0.5 72.4 Cu 16.5 130 W 4.4 411 At Saturation in 100 % relative humidity at 25 ° C from ref . Ryan et al ( 14 ) BCB date in 85 % relative humidity from Dow Chemical ...
... Siloxane 2010M -100 1.3 low bis Benzocyclobutene 32 52 2.0 0.26b SiO2 0.5 72.4 Cu 16.5 130 W 4.4 411 At Saturation in 100 % relative humidity at 25 ° C from ref . Ryan et al ( 14 ) BCB date in 85 % relative humidity from Dow Chemical ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films