Materials Research Society Symposia Proceedings, Volume 511 |
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Page 40
constant of normally cured (at 410 °C) thin films of hydrido-silsesquioxane (HSQ),
methyl-silsesquioxane (MSQ), and phenyl-silsesquioxane (PSQ) along with
Kapton polyimide. The dielectric constant of polyimide exhibits a broad maximum
...
constant of normally cured (at 410 °C) thin films of hydrido-silsesquioxane (HSQ),
methyl-silsesquioxane (MSQ), and phenyl-silsesquioxane (PSQ) along with
Kapton polyimide. The dielectric constant of polyimide exhibits a broad maximum
...
Page 51
ADVANTAGES OF E-BEAM CURING FOR SPIN-ON POLYMERS Thermal Depth-
Controlled Full Cure E-Beam Cure E-Beam Cure Figure 4: XPS analysis results
of Si:0:C stoichiometry for a methyl silsesquioxane polymer after thermal cure, ...
ADVANTAGES OF E-BEAM CURING FOR SPIN-ON POLYMERS Thermal Depth-
Controlled Full Cure E-Beam Cure E-Beam Cure Figure 4: XPS analysis results
of Si:0:C stoichiometry for a methyl silsesquioxane polymer after thermal cure, ...
Page 265
Recent results obtained on oxide-like materials, such as fluorinated oxide,
hydrogen silsesquioxane (HSQ), and methyl silsesquioxane (MSQ), are reviewed
. These materials can be successfully patterned using a fluorocarbon etching ...
Recent results obtained on oxide-like materials, such as fluorinated oxide,
hydrogen silsesquioxane (HSQ), and methyl silsesquioxane (MSQ), are reviewed
. These materials can be successfully patterned using a fluorocarbon etching ...
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Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1998 Materials Research a-C:F films a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition coefficient concentration copper curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate F1AC film thickness fluorine fluorocarbon FTIR function hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k lower Materials Research Society measured mechanical metal lines Microelectronics modulus moisture molecular nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silicon oxide silsesquioxane spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel