Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 40
... silsesquioxane ( HSQ ) , methyl - silsesquioxane ( MSQ ) , and phenyl - silsesquioxane ( PSQ ) along with Kapton polyimide . The dielectric constant of polyimide exhibits a broad maximum around 20 ° C and continues to decrease with ...
... silsesquioxane ( HSQ ) , methyl - silsesquioxane ( MSQ ) , and phenyl - silsesquioxane ( PSQ ) along with Kapton polyimide . The dielectric constant of polyimide exhibits a broad maximum around 20 ° C and continues to decrease with ...
Page 257
... Silsesquioxane Fils .CF4 Plasma Etched 500 Spconds € 200 .0 is 150 Intensity / Counts per second 1000 100 .0 Auger ... Silsesquioxane Film Plasma Etched 500 seconds Carbon is spectrum .0 - C - 0 .Hydrocarbons 7000 26000 5000 Intensity ...
... Silsesquioxane Fils .CF4 Plasma Etched 500 Spconds € 200 .0 is 150 Intensity / Counts per second 1000 100 .0 Auger ... Silsesquioxane Film Plasma Etched 500 seconds Carbon is spectrum .0 - C - 0 .Hydrocarbons 7000 26000 5000 Intensity ...
Page 265
... silsesquioxane ( HSQ ) , and methyl silsesquioxane ( MSQ ) , are reviewed . These materials can be successfully patterned using a fluorocarbon etching chemistry . The etching is in this case controlled by a thin fluorocarbon film at the ...
... silsesquioxane ( HSQ ) , and methyl silsesquioxane ( MSQ ) , are reviewed . These materials can be successfully patterned using a fluorocarbon etching chemistry . The etching is in this case controlled by a thin fluorocarbon film at the ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films