Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 44
... similar shift in the intensities of the O - Si - O stretches as seen for HSQ . It is worth pointing out that the cure temperatures at which the shift in intensities of the O - Si - O stretches occurred are different for these two ...
... similar shift in the intensities of the O - Si - O stretches as seen for HSQ . It is worth pointing out that the cure temperatures at which the shift in intensities of the O - Si - O stretches occurred are different for these two ...
Page 129
... similar to the one explained above for fluorine . A different resonance reaction ( 15N ( p , ay ) 12C ) at 6.385MeV is used . Similar to the fluorine profiling technique , this technique is nondestructive and capable of providing ...
... similar to the one explained above for fluorine . A different resonance reaction ( 15N ( p , ay ) 12C ) at 6.385MeV is used . Similar to the fluorine profiling technique , this technique is nondestructive and capable of providing ...
Page 141
... similar birefringence to poly ( a , a , a ' , a ' tetrafluoro - p - xylylene ) ( AF - 4 ) as - deposited , -0.1312@12°C versus -0.0936 @ 13 ° C , and after post - deposition anneal -0.1473@329°C and -0.1508@450°C.8 This result is not ...
... similar birefringence to poly ( a , a , a ' , a ' tetrafluoro - p - xylylene ) ( AF - 4 ) as - deposited , -0.1312@12°C versus -0.0936 @ 13 ° C , and after post - deposition anneal -0.1473@329°C and -0.1508@450°C.8 This result is not ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films