Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
From inside the book
Results 1-3 of 17
Page 109
... SOLVENT EVAPORATION / UNIFORMITY The processing of thin films with porosity and thickness uniformity is complicated by the very high solvent evaporation rates in the films . These high evaporation rates arise from several factors ...
... SOLVENT EVAPORATION / UNIFORMITY The processing of thin films with porosity and thickness uniformity is complicated by the very high solvent evaporation rates in the films . These high evaporation rates arise from several factors ...
Page 202
... solvent volatility are among the most important for spin - on films . Processing conditions also have an important role . For example , if the solvent evaporates too rapidly in the spin cup , the viscosity of the film on the wafer will ...
... solvent volatility are among the most important for spin - on films . Processing conditions also have an important role . For example , if the solvent evaporates too rapidly in the spin cup , the viscosity of the film on the wafer will ...
Page 214
... solvent evaporation occurs during spin - coating due to the high vapor pressure of ethanol , causing premature drying and shrinkage of the gel . To control the solvent evaporation , a sealed chamber saturated with ethanol vapor is ...
... solvent evaporation occurs during spin - coating due to the high vapor pressure of ethanol , causing premature drying and shrinkage of the gel . To control the solvent evaporation , a sealed chamber saturated with ethanol vapor is ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
41 other sections not shown
Other editions - View all
Common terms and phrases
1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films