Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 93
... stability , it was discovered that post - plasma annealing of the films , particularly at 400 ° C under N2 , provides dramatic improvements in the thermal stability of these materials . Most importantly , this enhanced thermal stability ...
... stability , it was discovered that post - plasma annealing of the films , particularly at 400 ° C under N2 , provides dramatic improvements in the thermal stability of these materials . Most importantly , this enhanced thermal stability ...
Page 200
... stability are required in order to withstand normal processing conditions . This is particularly true when tungsten plugs are required , as processing temperatures can reach 450 ° C . The most stable organic films currently available ...
... stability are required in order to withstand normal processing conditions . This is particularly true when tungsten plugs are required , as processing temperatures can reach 450 ° C . The most stable organic films currently available ...
Page 371
STABILITY OF SILICON - OXYGEN - FLUORINE AND CARBON - FLUORINE LOW - K DIELECTRICS WITH RESPECT TO ATTACK BY WATER H. Yang a ) and G. Lucovsky b ) a Department of Chemistry , Box 8204 , hong_yang@ncsu.edu " Department of Physics ...
STABILITY OF SILICON - OXYGEN - FLUORINE AND CARBON - FLUORINE LOW - K DIELECTRICS WITH RESPECT TO ATTACK BY WATER H. Yang a ) and G. Lucovsky b ) a Department of Chemistry , Box 8204 , hong_yang@ncsu.edu " Department of Physics ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films