Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 60
... stress during RABT . The intrinsic stress ( σ1 ) can be obtained by subtracting calculated thermal stress from the measured total stress . " It should be pointed out that TD - LPD FSG is deposited at room temperature , the as ...
... stress during RABT . The intrinsic stress ( σ1 ) can be obtained by subtracting calculated thermal stress from the measured total stress . " It should be pointed out that TD - LPD FSG is deposited at room temperature , the as ...
Page 187
... stress in the film . Above 3 MPa , the curves are linear with a slope 4.0 GPa ( R2 = 0.99 ) for the 9 μm film and ... stress is applied to the sample , the bow of the substrate is straightened out . This causes a significant increase in ...
... stress in the film . Above 3 MPa , the curves are linear with a slope 4.0 GPa ( R2 = 0.99 ) for the 9 μm film and ... stress is applied to the sample , the bow of the substrate is straightened out . This causes a significant increase in ...
Page 242
... stress . In the case of low - k dielectric materials , existing polymer materials can not be integrated with current ... stress . The stress itself is comprised of thermal stress ( from the thermal cycles that the wafer has to undergo ) ...
... stress . In the case of low - k dielectric materials , existing polymer materials can not be integrated with current ... stress . The stress itself is comprised of thermal stress ( from the thermal cycles that the wafer has to undergo ) ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films