Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 155
... structure , some of the characteristic features are shared by both vertical and horizontal direction . In a rigid- rod - like structure , the random intra - molecule coupling through the Van der Waals forces in the out of plane ...
... structure , some of the characteristic features are shared by both vertical and horizontal direction . In a rigid- rod - like structure , the random intra - molecule coupling through the Van der Waals forces in the out of plane ...
Page 308
... structure has negligible impact on overall circuit performance and provides several diffusion barrier layers between the Si devices and the copper interconnect structure . Certainly , no system of barrier layer will be defect - free ...
... structure has negligible impact on overall circuit performance and provides several diffusion barrier layers between the Si devices and the copper interconnect structure . Certainly , no system of barrier layer will be defect - free ...
Page 309
... structure of Al ( Cu ) / SiO2 line and W via has also been made . The metal line structure is a 1.9 μm wide Ti ( 25 nm ) / Al ( Cu ) ( 0.9 μm ) / Ti ( 25 nm ) / TIN ( 40 nm ) line - W stud . Prior to the tests , samples were annealed at ...
... structure of Al ( Cu ) / SiO2 line and W via has also been made . The metal line structure is a 1.9 μm wide Ti ( 25 nm ) / Al ( Cu ) ( 0.9 μm ) / Ti ( 25 nm ) / TIN ( 40 nm ) line - W stud . Prior to the tests , samples were annealed at ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films