Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 136
... substrate temperature of 125 ° C . Adhesion Testing Adhesion is measured using the modified - Edge Liftoff Test , m - ELT . It consists of applying a thick backing material ( e.g. epoxy ) to the test structure which is on a rigid substrate ...
... substrate temperature of 125 ° C . Adhesion Testing Adhesion is measured using the modified - Edge Liftoff Test , m - ELT . It consists of applying a thick backing material ( e.g. epoxy ) to the test structure which is on a rigid substrate ...
Page 184
... substrate ( Ɛ'sub ) and the polymer ( ε ) . The capacitance is independent of film thickness for thickness - to - electrode spacing ratios greater than 2 because the electric field is contained mostly within the polymer and the substrate ...
... substrate ( Ɛ'sub ) and the polymer ( ε ) . The capacitance is independent of film thickness for thickness - to - electrode spacing ratios greater than 2 because the electric field is contained mostly within the polymer and the substrate ...
Page 187
... substrate constrains the film . This causes the substrate to bow slightly with the polymer film on the concave side11 . As a through - plane compressive stress is applied to the sample , the bow of the substrate is straightened out ...
... substrate constrains the film . This causes the substrate to bow slightly with the polymer film on the concave side11 . As a through - plane compressive stress is applied to the sample , the bow of the substrate is straightened out ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films