Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 215
... surface tension solvent to reduce the capillary pressure in micropores during the subsequent drying process . As deposited porous silica xerogel films contain a large amount Si - OH groups at their pore surfaces and readily adsorb water ...
... surface tension solvent to reduce the capillary pressure in micropores during the subsequent drying process . As deposited porous silica xerogel films contain a large amount Si - OH groups at their pore surfaces and readily adsorb water ...
Page 282
... surface . There are two ways , ( a ) by chemical reaction and ( b ) by creating a physical layer such as a boundary layer ( formed at the surface when a fluid flows across [ 18 ] ) that impedes the abrasive's impact on surface , that ...
... surface . There are two ways , ( a ) by chemical reaction and ( b ) by creating a physical layer such as a boundary layer ( formed at the surface when a fluid flows across [ 18 ] ) that impedes the abrasive's impact on surface , that ...
Page 284
... surface leads to a different surface charge state , as shown by the zeta potential measurements . Depending on the surface charge of the BCB polymer in the slurry , electrostatic conditions may be such that the low surface charge of the ...
... surface leads to a different surface charge state , as shown by the zeta potential measurements . Depending on the surface charge of the BCB polymer in the slurry , electrostatic conditions may be such that the low surface charge of the ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films