Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 230
... structure had a dielectric constant of 2.7 , and was coated with approximately 30nm of PECVD silicon nitride . It ... test structure to evaluate this leakage effect is a 3.80 m long copper serpentine , separated from adjacent comb ...
... structure had a dielectric constant of 2.7 , and was coated with approximately 30nm of PECVD silicon nitride . It ... test structure to evaluate this leakage effect is a 3.80 m long copper serpentine , separated from adjacent comb ...
Page 308
... structure after CMP . This was so even if the PMDA - ODA layer was sandwiched between 0.2 μm thick silicon nitride ... Test structure and sample Figures 3 ( a ) and ( b ) show schematic diagrams of two - level test structures for Cu / PI ...
... structure after CMP . This was so even if the PMDA - ODA layer was sandwiched between 0.2 μm thick silicon nitride ... Test structure and sample Figures 3 ( a ) and ( b ) show schematic diagrams of two - level test structures for Cu / PI ...
Page 342
... test structure Figure 3 ( a ) shows a cross - sectional view of test structure with a - C : F ILD . The wiring consisted of 0.5 - um - wide layered metal , Ti ( 30 nm ) / TiN ( 100 nm ) /Al-0.5% Cu ( 450 nm ) / Ti ( 25 nm ) / TiN ( 50 ...
... test structure Figure 3 ( a ) shows a cross - sectional view of test structure with a - C : F ILD . The wiring consisted of 0.5 - um - wide layered metal , Ti ( 30 nm ) / TiN ( 100 nm ) /Al-0.5% Cu ( 450 nm ) / Ti ( 25 nm ) / TiN ( 50 ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films