Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 241
... thermal stress ( from the thermal cycles that the wafer has to undergo ) , residual stress , intrinsic stress , and gravitational stress . Increased wafer size and scaling of MOS devices is tightening the allowable window of operation ...
... thermal stress ( from the thermal cycles that the wafer has to undergo ) , residual stress , intrinsic stress , and gravitational stress . Increased wafer size and scaling of MOS devices is tightening the allowable window of operation ...
Page 242
... thermal processing steps . Macroscopic defects normally refer to ... cycles that the wafer has to undergo ) , residual stress , intrinsic stress ... thermal process . Thus , the use of RPP allows better properties at temperatures lower ...
... thermal processing steps . Macroscopic defects normally refer to ... cycles that the wafer has to undergo ) , residual stress , intrinsic stress ... thermal process . Thus , the use of RPP allows better properties at temperatures lower ...
Page 244
... thermal cycles that the wafer undergoes in subsequent processing steps . From the point of view of process integration , technologies that increase performance , reliability and yield are the only acceptable ones . New processes should ...
... thermal cycles that the wafer undergoes in subsequent processing steps . From the point of view of process integration , technologies that increase performance , reliability and yield are the only acceptable ones . New processes should ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films