Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 143
... thickness of ~ 112nm PPXN's as - deposited birefringence changed only slightly as a function of thickness at least up to ~ 800nm . Variability between -0.0544 to -0.0792 is caused more by the deposition conditions than the film ...
... thickness of ~ 112nm PPXN's as - deposited birefringence changed only slightly as a function of thickness at least up to ~ 800nm . Variability between -0.0544 to -0.0792 is caused more by the deposition conditions than the film ...
Page 184
... thickness and dielectric permittivity of the polymer change thereby changing the capacitance . Thus in order to calculate the thickness change , the dependence of dielectric permittivity on the applied load must first be determined ...
... thickness and dielectric permittivity of the polymer change thereby changing the capacitance . Thus in order to calculate the thickness change , the dependence of dielectric permittivity on the applied load must first be determined ...
Page 234
... thickness and refractive index of the a - F : C films were determined by a spectroscopic ellipsometer ( SENTECH Instruments Gmbh ) . To obtain more accurate results , we employed an X - ray reflectivity ( XRR ) technique to determine ...
... thickness and refractive index of the a - F : C films were determined by a spectroscopic ellipsometer ( SENTECH Instruments Gmbh ) . To obtain more accurate results , we employed an X - ray reflectivity ( XRR ) technique to determine ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films