Materials Research Society Symposia Proceedings, Volume 511 |
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Page 142
With this insight, the precursor can be molecularly designed to yield a polymer
thin film which has a low in-plane capacitance. THE EFFECT OF DEPOSITION
TEMPERATURE ON PPXC FILM STRUCTURE The deposition temperature is an
...
With this insight, the precursor can be molecularly designed to yield a polymer
thin film which has a low in-plane capacitance. THE EFFECT OF DEPOSITION
TEMPERATURE ON PPXC FILM STRUCTURE The deposition temperature is an
...
Page 171
STRESS-CORROSION CRACKING OF SPIN-ON GLASS THIN FILMS Robert F.
Cook and Eric G Liniger IBM Research, Yorktown Heights, NY 10598 ABSTRACT
The crack-velocity behavior of silsesqioxane spin-on glass thin films exposed to ...
STRESS-CORROSION CRACKING OF SPIN-ON GLASS THIN FILMS Robert F.
Cook and Eric G Liniger IBM Research, Yorktown Heights, NY 10598 ABSTRACT
The crack-velocity behavior of silsesqioxane spin-on glass thin films exposed to ...
Page 177
A NOVEL METHOD TO DETERMINE THE MECHANICAL PROPERTIES OF
ULTRA-THIN FILMS. C.C.White and W.L. Wu. National Institute of Standards and
Technology, Polymers Division, Gaithersburg, MD 20899 Recent experimental ...
A NOVEL METHOD TO DETERMINE THE MECHANICAL PROPERTIES OF
ULTRA-THIN FILMS. C.C.White and W.L. Wu. National Institute of Standards and
Technology, Polymers Division, Gaithersburg, MD 20899 Recent experimental ...
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Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
42 other sections not shown
Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1998 Materials Research a-C:F films a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition coefficient concentration copper curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate F1AC film thickness fluorine fluorocarbon FTIR function hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k lower Materials Research Society measured mechanical metal lines Microelectronics modulus moisture molecular nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silicon oxide silsesquioxane spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel