Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 87
... transition occurred near or above the glass transition temperature ( Tg ) of PS and the critical temperature of the system increased with decreasing molecular weight of PS . For PEI / PAI and PEI / PEO systems , the critical temperature ...
... transition occurred near or above the glass transition temperature ( Tg ) of PS and the critical temperature of the system increased with decreasing molecular weight of PS . For PEI / PAI and PEI / PEO systems , the critical temperature ...
Page 90
... transition occurs at lower temperature than those of Tg of both PEI ( ≈488K ) and PAI ( ≈543K ) . The solid line is a calculated curve and it agrees very well with experimental data . Figure 3 represents the cloud - point curves of ...
... transition occurs at lower temperature than those of Tg of both PEI ( ≈488K ) and PAI ( ≈543K ) . The solid line is a calculated curve and it agrees very well with experimental data . Figure 3 represents the cloud - point curves of ...
Page 208
... transition temperatures , adequate Young's moduli , low coefficients of thermal expansion , and low moisture outgassing rates in order for W plugs to be formed . This is a particular challenge for organic materials , although moisture ...
... transition temperatures , adequate Young's moduli , low coefficients of thermal expansion , and low moisture outgassing rates in order for W plugs to be formed . This is a particular challenge for organic materials , although moisture ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films