Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 347
... treatment power due to ion bombardment effect during the plasma treatment . As the plasma treatment power increased , the dielectric constant increased from 3.16 to 3.43 , while the change in the relative dielectric constant of the plasma ...
... treatment power due to ion bombardment effect during the plasma treatment . As the plasma treatment power increased , the dielectric constant increased from 3.16 to 3.43 , while the change in the relative dielectric constant of the plasma ...
Page 348
... treatment on the reliability and dielectric properties of the SiOF films was examined in terms of the post plasma treatment power . The change in surface roughness was measured by an atomic force microscopy ( AFM ) . Ellipsometric ...
... treatment on the reliability and dielectric properties of the SiOF films was examined in terms of the post plasma treatment power . The change in surface roughness was measured by an atomic force microscopy ( AFM ) . Ellipsometric ...
Page 379
... treatment in the Cr / PI system seems to operate in the AI / PI system . Chenite et al . reported that Al reacted with carbonyl groups at low coverage and additional interfacial reaction occurred involving the formation of N - Al and C ...
... treatment in the Cr / PI system seems to operate in the AI / PI system . Chenite et al . reported that Al reacted with carbonyl groups at low coverage and additional interfacial reaction occurred involving the formation of N - Al and C ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films