Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 67
... values of the implanted layer were extracted , which are shown in Fig . 7. The results demonstrated that the k value as low as 2.8 had been achieved . Unlike the effective values , the extracted dielectric constants in the implanted ...
... values of the implanted layer were extracted , which are shown in Fig . 7. The results demonstrated that the k value as low as 2.8 had been achieved . Unlike the effective values , the extracted dielectric constants in the implanted ...
Page 102
Capacitance ( pF ) This value can also be estimated empirically from the width of the Si peak , as 10.1eV / Å which is in reasonable agreement with the calculated values . Porosity ( % ) 85 F 80 75 70 T Aging Temp . ( C ) 45 50 Figure 1 ...
Capacitance ( pF ) This value can also be estimated empirically from the width of the Si peak , as 10.1eV / Å which is in reasonable agreement with the calculated values . Porosity ( % ) 85 F 80 75 70 T Aging Temp . ( C ) 45 50 Figure 1 ...
Page 163
... values , no further adjustment for the substrate's influence was done . For both cases no steps were seen in the indentation force vs. indentation depth for the load unload curves , at 2 mN max . force . In this study the onset of ...
... values , no further adjustment for the substrate's influence was done . For both cases no steps were seen in the indentation force vs. indentation depth for the load unload curves , at 2 mN max . force . In this study the onset of ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films