Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
From inside the book
Results 1-3 of 66
Page 109
... wafer during and after deposition ( necessary to prevent explosive concentrations of solvent in the surrounding air , to prevent particle contamination , and to insure uniform drying ) , 4 ) the practical necessity of performing ...
... wafer during and after deposition ( necessary to prevent explosive concentrations of solvent in the surrounding air , to prevent particle contamination , and to insure uniform drying ) , 4 ) the practical necessity of performing ...
Page 151
... wafer photothermal measurement for thin films . There are many advantages for the on - wafer measurement . First , with support from a solid wafer , it is much easier to manipulate thin films and conduct measurements . Second , since wafers ...
... wafer photothermal measurement for thin films . There are many advantages for the on - wafer measurement . First , with support from a solid wafer , it is much easier to manipulate thin films and conduct measurements . Second , since wafers ...
Page 153
... wafer measurement based on the thermoelastic response of the polymer film on silicon wafer . The behaviors of a free standing film and a film on wafer are very different . For a film on silicon wafer , a significant amount of thermal ...
... wafer measurement based on the thermoelastic response of the polymer film on silicon wafer . The behaviors of a free standing film and a film on wafer are very different . For a film on silicon wafer , a significant amount of thermal ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
41 other sections not shown
Other editions - View all
Common terms and phrases
1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films