Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 293
... wiring capacitance rather than reducing adjacent via capacitance . Because adjacent via length is negligible , compared with adjacent wiring length , increasing capping SiO2 thickness has less influence on the circuit RC delay . The ...
... wiring capacitance rather than reducing adjacent via capacitance . Because adjacent via length is negligible , compared with adjacent wiring length , increasing capping SiO2 thickness has less influence on the circuit RC delay . The ...
Page 342
... wiring temperature tends to degrade the wiring lifetime for low - k ILD . This joule heating effect is , therefore , a reliability issue for low - k ILD . EXPERIMENT We examined the influence of joule heating on the wiring lifetime for ...
... wiring temperature tends to degrade the wiring lifetime for low - k ILD . This joule heating effect is , therefore , a reliability issue for low - k ILD . EXPERIMENT We examined the influence of joule heating on the wiring lifetime for ...
Page 344
wiring Where , J is the current density in the wiring , E , is the activation energy of the dominant vacancy diffusion mechanism , k , is the Boltzmann constant , and T is the wiring temperature . C , is the constant determined by the ...
wiring Where , J is the current density in the wiring , E , is the activation energy of the dominant vacancy diffusion mechanism , k , is the Boltzmann constant , and T is the wiring temperature . C , is the constant determined by the ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films