Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 11
... Xerogel 100nm Figure 12. High aspect ratio ( 6 : 1 ) gapfill with xerogel . 0012 15KV X30.000 1Pm WD10 Silicon Nitride Oxide Silicon Nitride Oxide Adhesion Layer Xerogel Oxide Cu TI / TIN In each case , an embedded approach was used to.
... Xerogel 100nm Figure 12. High aspect ratio ( 6 : 1 ) gapfill with xerogel . 0012 15KV X30.000 1Pm WD10 Silicon Nitride Oxide Silicon Nitride Oxide Adhesion Layer Xerogel Oxide Cu TI / TIN In each case , an embedded approach was used to.
Page 216
... xerogel films . a ) An untreated film with absorbed water peaks . b ) A surface modified film showing the absence of absorbed water peaks . Porous silica xerogel films from 150 nm to over one micron in thickness are readily coated ...
... xerogel films . a ) An untreated film with absorbed water peaks . b ) A surface modified film showing the absence of absorbed water peaks . Porous silica xerogel films from 150 nm to over one micron in thickness are readily coated ...
Page 218
... xerogel [ 5 ] . The porous silica xerogel films used have a porosity of ~ 70 % with a dielectric constant of k ~ 1.8 as measured using MOSCAP on blanket films . Metal lines with 0.3 μm width / spacing are patterned using phase shifted i ...
... xerogel [ 5 ] . The porous silica xerogel films used have a porosity of ~ 70 % with a dielectric constant of k ~ 1.8 as measured using MOSCAP on blanket films . Metal lines with 0.3 μm width / spacing are patterned using phase shifted i ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films