Glass, Volume 26 |
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Page 3
( a ) Sio , n 1712 + SiO2 n + Fig . 1 . Schematic cross section of ( a ) a bipolar
transistor and ( b ) a metal - oxidesemiconductor field - effect transistor . The
doped regions in the silicon are labeled by type as n or p . Current flows between
emitter ...
( a ) Sio , n 1712 + SiO2 n + Fig . 1 . Schematic cross section of ( a ) a bipolar
transistor and ( b ) a metal - oxidesemiconductor field - effect transistor . The
doped regions in the silicon are labeled by type as n or p . Current flows between
emitter ...
Page 18
In large part , this is due to the fact that CVD leaves the Si - SiO2 interface intact .
Any irregularities that were originally present at the interface , such as defects or
impurities , would remain there to degrade the electrical properties . However ...
In large part , this is due to the fact that CVD leaves the Si - SiO2 interface intact .
Any irregularities that were originally present at the interface , such as defects or
impurities , would remain there to degrade the electrical properties . However ...
Page 126
For example , graphite appears suitable for melts containing SiO2 at
temperatures below 1550°C , but above 1550°C the reaction SiO2 + 2C → Si +
2CO ( g ) is favorable . Wusirika and Chyung ( 1980 ) reported using graphite
crucibles at ...
For example , graphite appears suitable for melts containing SiO2 at
temperatures below 1550°C , but above 1550°C the reaction SiO2 + 2C → Si +
2CO ( g ) is favorable . Wusirika and Chyung ( 1980 ) reported using graphite
crucibles at ...
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Contents
Nuclear Waste Glasses | 57 |
Oxynitride Glasses | 119 |
HeavyMetal Fluoride Glasses | 151 |
Copyright | |
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