Glass, Volume 26 |
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Page 2
1a current flowing between the emitter ( E ) and the collector ( C ) is controlled by
a voltage applied at the base ( B ) . In the field - effect transistor ( FET ) shown in
Fig . 1b current passing between the source ( S ) and drain ( D ) is controlled by ...
1a current flowing between the emitter ( E ) and the collector ( C ) is controlled by
a voltage applied at the base ( B ) . In the field - effect transistor ( FET ) shown in
Fig . 1b current passing between the source ( S ) and drain ( D ) is controlled by ...
Page 39
The capacitance of an MOS capacitor on a p - type substrate is shown as a
function of applied gate bias in Fig . 156 . Each of the three space - charge
conditions in the semiconductor is marked on the voltage axis . The spatial
distribution of ...
The capacitance of an MOS capacitor on a p - type substrate is shown as a
function of applied gate bias in Fig . 156 . Each of the three space - charge
conditions in the semiconductor is marked on the voltage axis . The spatial
distribution of ...
Page 42
The field in the absence of any charges in the oxide is constant and is
proportional to the applied voltage divided by the oxide thickness . The change in
field at the interfaces is indicated by the arrows from the dotted line to the solid
lines .
The field in the absence of any charges in the oxide is constant and is
proportional to the applied voltage divided by the oxide thickness . The change in
field at the interfaces is indicated by the arrows from the dotted line to the solid
lines .
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Contents
Nuclear Waste Glasses | 57 |
Oxynitride Glasses | 119 |
HeavyMetal Fluoride Glasses | 151 |
Copyright | |
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