Glass, Volume 26 |
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Page 39
The charge distribution in the metal and the p - type silicon is shown for three
different regions of gate voltage in ( a ) . are shown schematically in Fig . 15a , b .
The capacitance of an MOS capacitor on a p - type substrate is shown as a
function ...
The charge distribution in the metal and the p - type silicon is shown for three
different regions of gate voltage in ( a ) . are shown schematically in Fig . 15a , b .
The capacitance of an MOS capacitor on a p - type substrate is shown as a
function ...
Page 97
Increases in surface area from glass cracking and the distribution of sizes of
glass chunks and small particles produced from thermal and residual stresses
arising from various cooling rates were determined for simulated commercial
waste ...
Increases in surface area from glass cracking and the distribution of sizes of
glass chunks and small particles produced from thermal and residual stresses
arising from various cooling rates were determined for simulated commercial
waste ...
Page 252
The relaxation function has been given in the form ( DeBast and Gilard , 1963 ;
Rekhson and Ginzburg , 1976 ) Gy ( t ) = 26 exp [ - ( t / t3 ) b ] , ( 10 ) where the
exponent b is near Ž . Equation ( 10 ) is equivalent to a distribution of relaxation ...
The relaxation function has been given in the form ( DeBast and Gilard , 1963 ;
Rekhson and Ginzburg , 1976 ) Gy ( t ) = 26 exp [ - ( t / t3 ) b ] , ( 10 ) where the
exponent b is near Ž . Equation ( 10 ) is equivalent to a distribution of relaxation ...
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Contents
Nuclear Waste Glasses | 57 |
Oxynitride Glasses | 119 |
HeavyMetal Fluoride Glasses | 151 |
Copyright | |
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