Glass, Volume 26 |
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Page 3
As illustrated in Fig . 2c , this technology permits the simultaneous fabrication of
large numbers of p - njunctions on the same piece of silicon with precise control
over the spatial extent and doping profile of the junction . The patterning and ...
As illustrated in Fig . 2c , this technology permits the simultaneous fabrication of
large numbers of p - njunctions on the same piece of silicon with precise control
over the spatial extent and doping profile of the junction . The patterning and ...
Page 6
In an integrated circuit the elements of the circuit are fabricated in close proximity
on the same piece of silicon by using a process similar to the planar technology
illustrated in Fig . 2c . These steps produce many devices such as those shown ...
In an integrated circuit the elements of the circuit are fabricated in close proximity
on the same piece of silicon by using a process similar to the planar technology
illustrated in Fig . 2c . These steps produce many devices such as those shown ...
Page 41
The characteristic effects of interface traps and fixed charge on the high -
frequency C - V measurement are illustrated in Fig . 16 . Interface traps cause a
distortion of the curve from its ideal shape , as illustrated in Fig . 16a . The
distortion ...
The characteristic effects of interface traps and fixed charge on the high -
frequency C - V measurement are illustrated in Fig . 16 . Interface traps cause a
distortion of the curve from its ideal shape , as illustrated in Fig . 16a . The
distortion ...
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Contents
Nuclear Waste Glasses | 57 |
Oxynitride Glasses | 119 |
HeavyMetal Fluoride Glasses | 151 |
Copyright | |
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