Glass, Volume 26 |
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Page 3
The doped regions in the silicon are labeled by type as n or p . Current flows
between emitter ( source ) and collector ( drain ) and is controlled by voltages
applied to the base ( gate ) in the bipolar ( FET ) devices . The SiO2 films are
indicated ...
The doped regions in the silicon are labeled by type as n or p . Current flows
between emitter ( source ) and collector ( drain ) and is controlled by voltages
applied to the base ( gate ) in the bipolar ( FET ) devices . The SiO2 films are
indicated ...
Page 9
p - type silicon wafer forms the substrate on which this particular device is built .
Thick and thin oxide layers are grown or deposited on the substrate and act as
diffusion masks at various stages to allow the formation of heavily doped n - type
...
p - type silicon wafer forms the substrate on which this particular device is built .
Thick and thin oxide layers are grown or deposited on the substrate and act as
diffusion masks at various stages to allow the formation of heavily doped n - type
...
Page 43
silicon interface , more image charge is induced on the silicon and the change in
field becomes larger . This lever - arm effect is similar to that encountered in
determining the percentages of phases in equilibrium - phase diagrams . For the
...
silicon interface , more image charge is induced on the silicon and the change in
field becomes larger . This lever - arm effect is similar to that encountered in
determining the percentages of phases in equilibrium - phase diagrams . For the
...
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Contents
Nuclear Waste Glasses | 57 |
Oxynitride Glasses | 119 |
HeavyMetal Fluoride Glasses | 151 |
Copyright | |
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