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Page 3
The doped regions in the silicon are labeled by type as n or p. Current flows
between emitter (source) and collector (drain) and is controlled by voltages
applied to the base (gate) in the bipolar (FET) devices. The Si02 films are
indicated by the ...
The doped regions in the silicon are labeled by type as n or p. Current flows
between emitter (source) and collector (drain) and is controlled by voltages
applied to the base (gate) in the bipolar (FET) devices. The Si02 films are
indicated by the ...
Page 9
p-type silicon wafer forms the substrate on which this particular device is built.
Thick and thin oxide layers are grown or deposited on the substrate and act as
diffusion masks at various stages to allow the formation of heavily doped H-type ...
p-type silicon wafer forms the substrate on which this particular device is built.
Thick and thin oxide layers are grown or deposited on the substrate and act as
diffusion masks at various stages to allow the formation of heavily doped H-type ...
Page 43
silicon interface, more image charge is induced on the silicon and the change in
field becomes larger. This lever-arm effect is similar to that encountered in
determining the percentages of phases in equilibrium-phase diagrams. For the
case of ...
silicon interface, more image charge is induced on the silicon and the change in
field becomes larger. This lever-arm effect is similar to that encountered in
determining the percentages of phases in equilibrium-phase diagrams. For the
case of ...
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Contents
Nuclear Waste Glasses | 57 |
Oxynitride Glasses | 119 |
HeavyMetal Fluoride Glasses | 151 |
Copyright | |
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Common terms and phrases
AlF3 analysis Appl Phys Basis for Nuclear bead seal behavior Bendow borosilicate glass bulk glasses bulk modulus Ceram chemical composite sphere constant cooling corrosion crystalline crystallization curve dB/km devices dielectric differential strain Drexhage durability effects elastic electron energy equation fibers fluorohafnate fluorozirconate glasses fused silica glass formation glass transition glass transition temperature glass-clad glass-forming region heavy-metal fluoride glasses increase interface traps ions layers leaching Loehman Lucas Matecki materials measured melt metal Mitachi modulus MOSFET nitride nitrogen Non-Cryst Nuclear Waste Nuclear Waste Management observed optical optical fibers oxide glasses oxynitride glasses Poulain radiation Radioactive Waste radionuclides refractive index Rekhson result sample sandwich seal Scherer seal Eq setting temperature shown in Fig Si02 films silicon Solids solution split ring stiffness ratio stress relaxation structural relaxation studies Subsection substrate surface Table techniques thermal thickness viscoelastic viscosity vitrification Waste Management waste-glass waste-glass forms wavelength ZBLA ZBLAN ZrF4
Bibliographic information
| Title | Glass IV Treatise on Materials Science and Technology, Herbert Herman Volume 26 of Glass, Minoru Tomozawa |
| Authors | Minoru Tomozawa, R. H. Doremus |
| Editors | Minoru Tomozawa, R. H. Doremus |
| Publisher | Academic Press, 1985 |
| Original from | the University of Michigan |
| Digitized | 29 Nov 2007 |
| ISBN | 0123418267, 9780123418265 |
| Length | 333 pages |
| Subjects | › Glass Materials Materials science Technology & Engineering / General Technology & Engineering / Materials Science |
| Export Citation | BiBTeX EndNote RefMan |