## Solid state physics |

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Page 210

Both n and p increase rapidly with T, completely overwhelming any decrease in /

zn or fip, and the conductivity a increases rapidly with temperature. 10-8 Hall

Effect The Hall effect is easily observed in

Both n and p increase rapidly with T, completely overwhelming any decrease in /

zn or fip, and the conductivity a increases rapidly with temperature. 10-8 Hall

Effect The Hall effect is easily observed in

**semiconductors**. For an**n**-**type**...Page 211

Thus we can obtain the electron mobility from experimental values of a and Rh

for an

36) Problem 10-18. Consider a piece of some

...

Thus we can obtain the electron mobility from experimental values of a and Rh

for an

**n**-**type semiconductor**. Similarly, for a**p**-**type semiconductor**, fip = oRH- (10-36) Problem 10-18. Consider a piece of some

**n**-**type semiconductor**5.0 cm long,...

Page 258

If we apply a positive voltage to the semiconductor side of the junction (Va is

negative), the barrier presented to electrons flowing from the metal into the ...

Show that the junction between a metal and a

m ...

If we apply a positive voltage to the semiconductor side of the junction (Va is

negative), the barrier presented to electrons flowing from the metal into the ...

Show that the junction between a metal and a

**p**-**type semiconductor**is ohmic if $m ...

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### Contents

XRay Diffraction | 37 |

Lattice Vibrations | 61 |

Classical Model of Metals | 89 |

Copyright | |

12 other sections not shown

### Common terms and phrases

Answer Appendix basis vectors bcc lattice bond Bragg angle Bragg's Law Bravais lattice Brillouin zone called Chapter collisions conduction electrons Consider conventional unit cell Cooper pairs depletion layer diode direction dispersion curve displacement distance doped effective mass elec electric current electric field electrons and holes emitter energy band equal example Fermi energy Fermi level Fermi surface force forward biased free electron free particle frequency given by Eq inside integers ions k-space laser lattice parameter lattice points lattice vector lattice wave magnetic field n-type semiconductor NaCl negative neutrons number of electrons obtain occupied one-dimensional oscillate p-n junction photon positively charged potential energy primitive unit cell Problem rays reciprocal lattice reverse biased sc lattice scattered Schroedinger's equation shown in Fig sodium metal solid structure superconductor temperature tion transistor trons unit cell unoccupied values velocity voltage wave function wave number wave vector wavelength Wigner-Seitz cell wire x-ray diffraction zero