Treatise on Materials Science and Technology, Volume 2; Volume 19, Part 1 |
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Page 162
For homogeneous material the excitation profile inside the sample is a simple
exponential according to U ( x ) = U , exp ( - ax ) , ( 1 ) where U , is the excitation
rate ( number of electron - hole pairs created per second and unit volume ) at the
...
For homogeneous material the excitation profile inside the sample is a simple
exponential according to U ( x ) = U , exp ( - ax ) , ( 1 ) where U , is the excitation
rate ( number of electron - hole pairs created per second and unit volume ) at the
...
Page 178
As a comparison is shown the spectrum obtained with above bandgap excitation
, where an overlap of more shallow DAP spectra obscures the features in the
region of the no - phonon ( electronic ) spectrum of the Ge - related DA - pair ...
As a comparison is shown the spectrum obtained with above bandgap excitation
, where an overlap of more shallow DAP spectra obscures the features in the
region of the no - phonon ( electronic ) spectrum of the Ge - related DA - pair ...
Page 179
of emission ) as a function of excitation photon energy . This has been a
traditional technique for obtaining optical information about defect absorption (
Klick and Schulman , 1957 ) , as well as fundamental absorption of a material (
Dean ...
of emission ) as a function of excitation photon energy . This has been a
traditional technique for obtaining optical information about defect absorption (
Klick and Schulman , 1957 ) , as well as fundamental absorption of a material (
Dean ...
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Contents
Principles of XRay Stress Measurement | 4 |
Control of Accuracy and Precision | 25 |
Applications | 45 |
Copyright | |
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absorption addition allow alloy angle Appl applications atoms band bandgap beam broadening cause coefficients components composition concentration constant cooling cross section crystal curve defects dependent deposits depth determined developed diffraction diffusion direction discussed dislocation distribution effect electron elements employed energy error et al example excitation experimental factor field function give given grain heat important impurities increasing intensity iron laser lattice layer less magnetic material measurements Metals method Mössbauer needed neighbor observed obtained occur optical peak phase photoluminescence Phys plane position possible powder problem produce properties range rays recently recombination region relative residual stress sample semiconductors shift shown Society solid spacing specimen spectra spectrum sputtering steel strain structure studies substrate surface target technique temperature term thickness values variation X-ray