Treatise on Materials Science and Technology, Volume 2; Volume 19, Part 1 |
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Page 162
Bulk diffusion lengths for excess carriers are usually rather short for direct
bandgap materials ( 1 - 10 um in GaAs ... For homogeneous material the
excitation profile inside the sample is a simple exponential according to U ( x ) =
U , exp ( - ax ) ...
Bulk diffusion lengths for excess carriers are usually rather short for direct
bandgap materials ( 1 - 10 um in GaAs ... For homogeneous material the
excitation profile inside the sample is a simple exponential according to U ( x ) =
U , exp ( - ax ) ...
Page 184
In p - type material the electron occupancy of the donor state is usually quite low ,
which means that the carrier traffic via the conduction band can be neglected .
Under such conditions , which are generally easily reached in practice the above
...
In p - type material the electron occupancy of the donor state is usually quite low ,
which means that the carrier traffic via the conduction band can be neglected .
Under such conditions , which are generally easily reached in practice the above
...
Page 243
The vaporized target material ionizes and , thus , continues to support the arc , so
additional target material is vaporized locally , and so on . Random forces tend to
move the arc about the target , and often the site of arcing or “ ' arc tracks ” can ...
The vaporized target material ionizes and , thus , continues to support the arc , so
additional target material is vaporized locally , and so on . Random forces tend to
move the arc about the target , and often the site of arcing or “ ' arc tracks ” can ...
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Contents
Principles of XRay Stress Measurement | 4 |
Control of Accuracy and Precision | 25 |
Applications | 45 |
Copyright | |
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absorption addition allow alloy angle Appl applications atoms band bandgap beam broadening cause coefficients components composition concentration constant cooling cross section crystal curve defects dependent deposits depth determined developed diffraction diffusion direction discussed dislocation distribution effect electron elements employed energy error et al example excitation experimental factor field function give given grain heat important impurities increasing intensity iron laser lattice layer less magnetic material measurements Metals method Mössbauer needed neighbor observed obtained occur optical peak phase photoluminescence Phys plane position possible powder problem produce properties range rays recently recombination region relative residual stress sample semiconductors shift shown Society solid spacing specimen spectra spectrum sputtering steel strain structure studies substrate surface target technique temperature term thickness values variation X-ray