Treatise on Materials Science and Technology, Volume 2; Volume 19, Part 1 |
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Summary References 130 138 142 145 147 Photoluminescence Techniques for
Studies of Composition and Defects in Semiconductors B . Monemar 151 I .
Introduction II . Equipment for Photoluminescence Experiments III . Profiling of
Bulk ...
Summary References 130 138 142 145 147 Photoluminescence Techniques for
Studies of Composition and Defects in Semiconductors B . Monemar 151 I .
Introduction II . Equipment for Photoluminescence Experiments III . Profiling of
Bulk ...
Page 151
Profiling of Bulk Properties of Semiconductors with Photoluminescence . . 158 A .
Composition Profiling of Semiconductor Alloys . . . . . . . . 159 B .
Photoluminescence Profiling of Spectral Properties Related to Inhomogeneities
in Doping .
Profiling of Bulk Properties of Semiconductors with Photoluminescence . . 158 A .
Composition Profiling of Semiconductor Alloys . . . . . . . . 159 B .
Photoluminescence Profiling of Spectral Properties Related to Inhomogeneities
in Doping .
Page 156
Another important class of defects in semiconductors are the line defects , called
dislocations . ... Further , additional dislocations can easily be created during the
various steps of processing of the semiconductor material for device fabrication .
Another important class of defects in semiconductors are the line defects , called
dislocations . ... Further , additional dislocations can easily be created during the
various steps of processing of the semiconductor material for device fabrication .
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Contents
Principles of XRay Stress Measurement | 4 |
Control of Accuracy and Precision | 25 |
Applications | 45 |
Copyright | |
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absorption addition allow alloy angle Appl applications atoms band bandgap beam broadening cause coefficients components composition concentration constant cooling cross section crystal curve defects dependent deposits depth determined developed diffraction diffusion direction discussed dislocation distribution effect electron elements employed energy error et al example excitation experimental factor field function give given grain heat important impurities increasing intensity iron laser lattice layer less magnetic material measurements Metals method Mössbauer needed neighbor observed obtained occur optical peak phase photoluminescence Phys plane position possible powder problem produce properties range rays recently recombination region relative residual stress sample semiconductors shift shown Society solid spacing specimen spectra spectrum sputtering steel strain structure studies substrate surface target technique temperature term thickness values variation X-ray