Treatise on Materials Science and Technology, Volume 2; Volume 19, Part 1 |
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Page 171
An example of this is shown in Fig . 11 , for epitaxial GaAs where a correlation of
growth terraces observed on the surface and the intensity of a Mn - related
emission was found . In this case high lateral spatial resolution was required ,
which ...
An example of this is shown in Fig . 11 , for epitaxial GaAs where a correlation of
growth terraces observed on the surface and the intensity of a Mn - related
emission was found . In this case high lateral spatial resolution was required ,
which ...
Page 201
A simple example is shown in Fig . 29 , where an area of a PL topograph of the
active region of an LPE - grown DH GaAs - Al . Gal - As structure is shown at
rather low magnification . Darker spots are observed , which were found to be ...
A simple example is shown in Fig . 29 , where an area of a PL topograph of the
active region of an LPE - grown DH GaAs - Al . Gal - As structure is shown at
rather low magnification . Darker spots are observed , which were found to be ...
Page 203
In ( a ) is shown a low intensity PL topograph ( - 50 W / cm2 ) of the active region
of a ppnn GaAs - Al , Ga , - As DH laser structure , obtained at room temperature .
The dark curved LDS area is due to small dislocation loops around a scratch at ...
In ( a ) is shown a low intensity PL topograph ( - 50 W / cm2 ) of the active region
of a ppnn GaAs - Al , Ga , - As DH laser structure , obtained at room temperature .
The dark curved LDS area is due to small dislocation loops around a scratch at ...
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Contents
Principles of XRay Stress Measurement | 4 |
Control of Accuracy and Precision | 25 |
Applications | 45 |
Copyright | |
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absorption addition allow alloy angle Appl applications atoms band bandgap beam broadening cause coefficients components composition concentration constant cooling cross section crystal curve defects dependent deposits depth determined developed diffraction diffusion direction discussed dislocation distribution effect electron elements employed energy error et al example excitation experimental factor field function give given grain heat important impurities increasing intensity iron laser lattice layer less magnetic material measurements Metals method Mössbauer needed neighbor observed obtained occur optical peak phase photoluminescence Phys plane position possible powder problem produce properties range rays recently recombination region relative residual stress sample semiconductors shift shown Society solid spacing specimen spectra spectrum sputtering steel strain structure studies substrate surface target technique temperature term thickness values variation X-ray